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| LEADER |
00672pamaa2200205 4500 |
| 001 |
0000003302 |
| 005 |
20060607090000.0 |
| 020 |
0 |
0 |
|a 013614330X
|
| 082 |
|
|
|a 621.3815 KRA 1997
|
| 090 |
0 |
0 |
|a TK7871.85
|b KRA 1997
|
| 100 |
1 |
0 |
|a KRAMER
|
| 245 |
1 |
0 |
|a Semiconductors devices :
|b a simulation approach
|c Kevin M. Kramer, W. Nicholas G. Hitchon.
|
| 260 |
0 |
0 |
|a New Jersey:
|b Prentice Hall,
|c 1997.
|
| 300 |
|
|
|a xiii, 707p.:
|b 24cm.
|
| 500 |
0 |
0 |
|a Includes 1 CD-ROM
|
| 650 |
0 |
0 |
|a Semiconductors --
|x Characterization
|
| 650 |
0 |
0 |
|a Diodes, Semiconductor
|
| 650 |
0 |
0 |
|a Bipolar transistors
|
| 650 |
0 |
0 |
|a Metal oxide semiconductor field-effect transistors
|
| 700 |
1 |
1 |
|a Hitchon,
|h W. Nicholas
|
